dim400xcm33 - f000 igbt chopper module replaces ds5938 - 1.0 ds5938 - 2 may 2011 (ln 28404 ) caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 1 / 8 www.dynexsemi.com features ? 10s short circuit withstand ? high thermal cycling capability ? soft punch through silicon ? isolated alsic base with aln substrates ? lead free c onstruction ? 10.2kv isolation package applications ? high reliability inverters ? motor controllers ? traction drives ? choppers the powerline range of high power modules includes half bridge, chopper, dual, single and bi - directional switch configurations covering voltages from 12 00v to 65 00v and currents up to 2400a. the dim 400xcm33 - f000 is a 33 00v, soft punch thr ough n - channel enhancement mode, insulated gate bipolar transistor (igbt) chopper module. the igbt has a wide reverse bias safe operating area (rbsoa) plus 10s short circuit withstand. this device is optimised for traction drives and other applications re quiring high thermal cycling capability. the module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety . ordering information order as: dim 400xcm33 - f000 note: when ordering, please use the complete part number key parameters v ces 33 00 v v ce(sat) * (typ) 2.8 v i c (max) 4 00 a i c(pk) (max) 8 00 a * measured at the auxiliary terminals fig. 1 circuit configuration outline type code: x (see fig. 11 for further information) fig. 2 package 2(g) 1(e) 6(e) 3(c) 4(k) 5(a) 7(c)
dim 400xcm33 - f000 2 /8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com absolute maximum ratings stresses above those listed under absolute maximum ratings may cause permanent damage to the device. in extreme condition s, as with all semiconductors, this may include potentially hazardous rupture of the package. appropriate safety precautions should always be followed. exposure to absolute maximum ratings may affect device reliability. t case = 25c unless stated otherwi se symbol parameter test conditions max. units v ces collector - emitter voltage v ge = 0v 3 300 v v ges gate - emitter voltage 20 v i c continuous collector current t case = 90 c 4 00 a i c(pk) peak collector current 1ms, t case = 115 c 8 00 a p max max. transis tor power dissipation t case = 25c, t j = 150c 5200 w i 2 t diode i 2 t value (igbt arm) v r = 0, t p = 10ms, t j = 125oc 80 ka 2 s diode i 2 t value (diode arm) 80 ka 2 s v isol isolation voltage C per module commoned terminals to base plate. ac rms, 1 min, 50hz 1 0 .2 k v q pd partial discharge C per module iec1287, v 1 = 69 00v, v 2 = 51 00v, 50hz rms 10 pc thermal and mechanical ratings internal insulation material: aln baseplate material: alsic creepage distance: 56 mm clearance: 26 mm cti (comparative track ing index): >600 symbol parameter test conditions min typ. max units r th(j - c) thermal resistance C C th(j - c) thermal resistance C C C th(c - h) thermal resistance C j junction temperature transistor - - 150 c diode - - 125 c t stg storage temperature range - - 40 - 125 c screw torque mounting C C C
dim 400xcm33 - f000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 3 / 8 www.dynexsemi.com electrical characteristics t case = 25 c unless stated otherwise. symbol parame ter test conditions min typ max units i ces collector cut - off current v ge = 0v, v ce = v ces 2 ma v ge = 0v, v ce = v ces , t case = 125c 30 ma i ges gate leakage current v ge = 20 v, v ce = 0v 1 a v ge(th) gate threshold voltage i c = 4 0ma, v ge = v ce 5 . 5 6 .5 7 . 0 v v ce(sat) ? collector - emitter saturation voltage v ge = 15v, i c = 4 00a 2.8 v v ge = 15v, i c = 4 00a, t j = 125c 3.6 v i f diode forward current dc 400 a i fm diode maximum forward current t p = 1ms 800 a v f ? diode forward voltage (igb t arm) i f = 4 00a 2.9 v diode forward voltage (diode arm) 2.9 v diode forward voltage (igbt arm) i f = 4 00a, t j = 125c 3.0 v diode forward voltage (diode arm) 3.0 v c ies input capacitance v ce = 25v, v ge = 0v, f = 1mhz 72 nf q g gate ch arge 15v 10 c c res reverse transfer capacitance v ce = 25v, v ge = 0v, f = 1mhz 1.1 nf l m module inductance C per arm 30 nh r int internal resistance C per arm 260 ? sc data short circuit current, i sc t j = 125c, v cc = 25 00v t p 10s, v ge 15v v ce (max) = v ces C l * x di/dt iec 60747 - 9 1850 a note: ? me asured at the auxiliary terminals * l is the circuit inductance + l m
dim 400xcm33 - f000 4 /8 caution: this device is sensitive to electrostatic discharge. users sh ould follow esd handling procedures. www.dynexsemi.com electrical characteristics t case = 25c unless stated otherwise symbol parameter test conditions min typ. max uni ts t d(off) turn - off delay time i c = 400a v ge = 15v v ce = 1800v c ge = 110nf l s ~ 100nh r g(on) = 8.2 ? r g(off) = 8.2 ? 2.1 s t f fall time 210 ns e off turn - off energy loss 520 mj t d(on) turn - on delay time 1130 ns t r rise time 245 ns e o n turn - on energy loss r g(on) = 5.6 ? r g(off) = 8.2 ? 620 mj q rr diode reverse recovery charge i f = 400a v ce = 1800v di f /dt = 2000a/s 160 c i rr diode reverse recovery current 330 a e rec diode reverse recovery energy 150 mj t case = 125c unl ess stated otherwise symbol parameter test conditions min typ. max units t d(off) turn - off delay time i c = 400a v ge = 15v v ce = 1800v c ge = 110nf l s ~ 100nh r g(on) = 8.2 ? r g(off) = 8.2 ? 2.15 s t f fall time 220 ns e off turn - off energy loss 600 mj t d(on) turn - on delay time 1160 ns t r rise time 285 ns e on turn - on energy loss r g(on) = 5.6 ? r g(off) = 8.2 ? 870 mj q rr diode reverse recovery charge i f = 400a v ce = 1800v di f /dt = 2000a/s 300 c i rr diode reverse recovery current 4 00 a e rec diode reverse recovery energy 300 mj
dim 400xcm33 - f000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 5 / 8 www.dynexsemi.com fig. 3 typical output characteristics fig. 4 typical output characteristics fig. 5 typical switching energy vs collector current fig. 6 typical switching energy vs gate re sistance
dim 400xcm33 - f000 6 /8 caution: this device is sensitive to electrostatic discharge. users sh ould follow esd handling procedures. www.dynexsemi.com fig. 7 diode typical forward characteristics fig. 8 reverse bias safe operating area fig. 9 diode reverse bias safe operating area fig. 10 transient thermal impedance
dim 400xcm33 - f000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 7 / 8 www.dynexsemi.com package details for further package information, pl ease visit our website or contact customer services. all dimensions in mm, unless stated otherwise. do not scale. nominal weight: 1100g module outline type code: x fig. 11 module outline drawing 4 x m8 3 x m4 screwing depth max. 16 screwing depth max. 8 130 0.5 57 0.25 57 0.25 140 0.5 44 0.2 124 0.25 18 0.1 28.5 0.2 42.5 0.2 30.7 0.2 48 +1.5 -0.0 5 0.2 16.5 0.2 61.2 0.3 7 41 0.2 18 0.2 38 0.5 6 x 7 ?
dim 400xcm33 - f000 8 /8 caution: this device is sensitive to electrostatic discharge. users sh ould follow esd handling procedures. www.dynexsemi.com important information: this public ation is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is re sponsible for product selection and ensuring all safety and any warning requirements are met. should additional product information be needed please contact customer service. although we have endeavoured to carefully compile the information in this publi cation it may contain inaccuracies or typographical errors. the information is provided without any warranty or guarantee of any kind. this publication is an uncontrolled document and is subject to change without notice. when referring to it please ensu re that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. the products must not be touched when operating because there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. extended exposure to conditions outsi de the product ratings may affect reliability leading to premature product failure. use outside the product ratings is likely to cause permanent damage to the product. in extreme conditions, as with all semiconductors, this may include potentially hazard ous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate application design and safety precautions should always be followed to protect persons and property. product status & product ordering: we annotate d atasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. the annotations are as follows: - target information: this is the most tentative form of information and represents a ve ry preliminary specification. no actual design work on the product has been started. preliminary information: the product design is complete and final characterisation for vo lume production is in progress. the datasheet represents the prod uct as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the t ime of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on request. any brand names and product names used in this publication are trademarks, registered trade marks or trade names of their respective owners. headquarters operations customer service dynex semiconductor ltd doddington road, lincoln, lincolnshire, ln6 3lf, united kingdom dynex semiconductor ltd doddington road, lincoln, lincolnshire, ln6 3lf, united kingdom fax: +44(0)1522 500550 fax: +44(0)1522 500020 tel: +44(0)1522 500500 tel: +44(0)1522 502753 / 502901 web: http://www.dynexsemi.com email: power_solutions@dynexsemi.com ? dynex semiconductor ltd. 2009 technical documentation C not for resale.
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